Visualizing localized, radiative defects in GaAs solar cells.

ABSTRACT: We have used a calibrated, wide-field hyperspectral imaging instrument to obtain absolute spectrally and spatially resolved photoluminescence images in high growth-rate, rear-junction GaAs solar cells from 300 to 77 K. At the site of some localized defects scattered throughout the active layer, we report a novel, double-peak luminescence emission with maximum peak energies corresponding to both the main band-to-band transition and a band-to-impurity optical transition below the band gap energy. Temperature-dependent imaging reveals that the evolution of the peak intensity and energy agrees well with a model of free-to-bound recombination with a deep impurity center, likely a gallium antisite defect. We also analyzed the temperature dependence of the band-to-band transition within the conte

SUBMITTER: Hamadani BH 

PROVIDER: S-EPMC9436936 | biostudies-literature | 2022 Sep

REPOSITORIES: biostudies-literature