A performance comparison between GaInP-on-Si and GaAs-on-Si 3-terminal tandem solar cells.

ABSTRACT: The pursuit of ever-higher solar cell efficiencies has focused heavily on multijunction technologies. In tandem cells, subcells are typically either contacted via two terminals (2T) or four terminals (4T). Simulations show that the less-common three-terminal (3T) design may be comparable to 4T tandem cells in its compatibility with a range of materials, operating conditions, and methods for subcell integration, yet the 3T design circumvents shading losses of the 4T intermediate conductive layers. This study analyzes the performance of two superstrate 3T III-V-on-Si (III-V//Si) tandem cells: One has slightly greater current contribution from the Si bottom cell (GaInP//Si) and the other has substantially greater current contribution from the GaAs top cell (GaAs//Si). Our results show that bo

SUBMITTER: VanSant KT 

PROVIDER: S-EPMC9450120 | biostudies-literature | 2022 Sep

REPOSITORIES: biostudies-literature