High grain boundary recombination velocity in polycrystalline metal halide perovskites.

ABSTRACT: Understanding carrier recombination processes in metal halide perovskites is fundamentally important to further improving the efficiency of perovskite solar cells, yet the accurate recombination velocity at grain boundaries (GBs) has not been determined. Here, we report the determination of carrier recombination velocities at GBs (S_GB) of polycrystalline perovskites by mapping the transient photoluminescence pattern change induced by the nonradiative recombination of carriers at GBs. Charge recombination at GBs is revealed to be even stronger than at surfaces of unpassivated films, with average S_GB reaching 2200 to 3300 cm/s. Regular surface treatments do not passivate GBs because of the absence of contact at GBs. We find a surface treatment using tribut

SUBMITTER: Ni Z 

PROVIDER: S-EPMC9451161 | biostudies-literature | 2022 Sep

REPOSITORIES: biostudies-literature