Influence of Grain Boundary Scattering on the Field-Effect Mobility of Solid-Phase Crystallized Hydrogenated Polycrystalline In₂O₃ (In₂O₃:H).

ABSTRACT: Hydrogenated polycrystalline In₂O₃ (In₂O₃:H) thin-film transistors (TFTs) fabricated via the low-temperature solid-phase crystallization (SPC) process with a field-effect mobility (μ_FE) exceeding 100 cm² V^-1 s^-1 are promising candidates for future electronics applications. In this study, we investigated the effects of the SPC temperature of Ar + O₂ + H₂-sputtered In₂O₃:H films on the electron transport properties of In₂O₃:H TFTs. The In₂O₃:H TFT with an SPC temperature of 300 °C exhibited the best performance, having the largest µ_FE of 139.2 cm² V^-1 s^-1. In co

SUBMITTER: Magari Y 

PROVIDER: S-EPMC9458122 | biostudies-literature | 2022 Aug

REPOSITORIES: biostudies-literature