Graphene Film Growth on Silicon Carbide by Hot Filament Chemical Vapor Deposition.

ABSTRACT: The electrical properties of graphene on dielectric substrates, such as silicon carbide (SiC), have received much attention due to their interesting applications. This work presents a method to grow graphene on a 6H-SiC substrate at a pressure of 35 Torr by using the hot filament chemical vapor deposition (HFCVD) technique. The graphene deposition was conducted in an atmosphere of methane and hydrogen at a temperature of 950 °C. The graphene films were analyzed using Raman spectroscopy, scanning electron microscopy, atomic force microscopy, energy dispersive X-ray, and X-ray photoelectron spectroscopy. Raman mapping and AFM measurements indicated that few-layer and multilayer graphene were deposited from the external carbon source depending on the growth parameter conditions. The compositi

SUBMITTER: Rodriguez-Villanueva S 

PROVIDER: S-EPMC9458213 | biostudies-literature | 2022 Sep

REPOSITORIES: biostudies-literature