Preferential growth of (001)-oriented Bi₂SiO₅ thin films deposited on (101)-oriented rutile substrates and their ferroelectric and dielectric properties.

ABSTRACT: Ferroelectric thin films are important because of their great potential for use in various electric devices such as ferroelectric random-access memory. It was expected that Bi₂SiO₅, a Si-containing ferroelectric material, would show improved ferroelectricity by targeting a film with the (001)-orientation (polar-axis) on the substrate. Although there was a narrow process window for the deposition of the (010)/(001)-oriented Bi₂SiO₅ thin film, it was successfully prepared on a (101)-oriented TiO₂ single substrate using the pulsed layer deposition technique. The optimum film deposition conditions and film thickness were found, and in this material, the volume fraction of the (001)-oriented domain reached about 70%. By controlling film ori

SUBMITTER: Kodera M 

PROVIDER: S-EPMC9458711 | biostudies-literature | 2022 Sep

REPOSITORIES: biostudies-literature