Chemical deposition of Cu₂O films with ultra-low resistivity: correlation with the defect landscape.

ABSTRACT: Cuprous oxide (Cu₂O) is a promising p-type semiconductor material for many applications. So far, the lowest resistivity values are obtained for films deposited by physical methods and/or at high temperatures (~1000 °C), limiting their mass integration. Here, Cu₂O thin films with ultra-low resistivity values of 0.4 Ω.cm were deposited at only 260 °C by atmospheric pressure spatial atomic layer deposition, a scalable chemical approach. The carrier concentration (7.10¹⁴-2.10¹⁸ cm^-3), mobility (1-86 cm²/V.s), and optical bandgap (2.2-2.48 eV) are easily tuned by adjusting the fraction of oxygen used during deposition. The properties of the films are correlated to the defect landscape, as revealed by a combination of techniques (

SUBMITTER: Sekkat A 

PROVIDER: S-EPMC9463139 | biostudies-literature | 2022 Sep

REPOSITORIES: biostudies-literature