Epitaxial growth of SiGe films by annealing Al-Ge alloyed pastes on Si substrate.

ABSTRACT: A simple, low-cost, and non-vacuum epitaxial growth method to realize large-area semiconductors on crystalline silicon will become the game-changer for various applications. For example, we can expect the disruptive effect on the cost of large-scale III-V multi-junction solar cells if we could replace the high-cost germanium substrate with silicon-germanium (SiGe) on Si. For SiGe epitaxial growth, we attempted to develop a process using original Al-Ge pastes for screen printing and subsequent annealing. We compare two pastes including Al-Ge alloyed pastes with compositional uniformity in each particle and Al-Ge mixed pastes. We revealed that Al-Ge alloyed paste could form flatter SiGe film with much less residual pastes, supported by in-situ observations. The uniform and sufficient dissolu

SUBMITTER: Fukuda K 

PROVIDER: S-EPMC9467981 | biostudies-literature | 2022 Sep

REPOSITORIES: biostudies-literature