Interplay of the disorder and strain in gallium oxide.

ABSTRACT: Ion irradiation is a powerful tool to tune properties of semiconductors and, in particular, of gallium oxide (Ga₂O₃) which is a promising ultra-wide bandgap semiconductor exhibiting phase instability for high enough strain/disorder levels. In the present paper we observed an interesting interplay between the disorder and strain in monoclinic β-Ga₂O₃ single crystals by comparing atomic and cluster ion irradiations as well as atomic ions co-implants. The results obtained by a combination of the channeling technique, X-ray diffraction and theoretical calculations show that the disorder accumulation in β-Ga₂O₃ exhibits superlinear behavior as a function of the collision cascade density. Moreover, the level of strain in the impla

SUBMITTER: Azarov A 

PROVIDER: S-EPMC9470558 | biostudies-literature | 2022 Sep

REPOSITORIES: biostudies-literature