Selective Electron Beam Patterning of Oxygen-Doped WSe₂ for Seamless Lateral Junction Transistors.

ABSTRACT: Surface charge transfer doping (SCTD) using oxygen plasma to form a p-type dopant oxide layer on transition metal dichalcogenide (TMDs) is a promising doping technique for 2D TMDs field-effect transistors (FETs). However, patternability of SCTD is a key challenge to effectively switch FETs. Herein, a simple method to selectively pattern degenerately p-type (p⁺ )-doped WSe₂ FETs via electron beam (e-beam) irradiation is reported. The effect of the selective e-beam irradiation is confirmed by the gate-tunable optical responses of seamless lateral p⁺ -p diodes. The OFF state of the devices by inducing trapped charges via selective e-beam irradiation onto a desired channel area in p⁺ -doped WSe₂ , which is in sharp contrast to globally p

SUBMITTER: Ngo TD 

PROVIDER: S-EPMC9475546 | biostudies-literature | 2022 Sep

REPOSITORIES: biostudies-literature