Integrated wafer-scale ultra-flat graphene by gradient surface energy modulation.

ABSTRACT: The integration of large-scale two-dimensional (2D) materials onto semiconductor wafers is highly desirable for advanced electronic devices, but challenges such as transfer-related crack, contamination, wrinkle and doping remain. Here, we developed a generic method by gradient surface energy modulation, leading to a reliable adhesion and release of graphene onto target wafers. The as-obtained wafer-scale graphene exhibited a damage-free, clean, and ultra-flat surface with negligible doping, resulting in uniform sheet resistance with only ~6% deviation. The as-transferred graphene on SiO₂/Si exhibited high carrier mobility reaching up ~10,000 cm² V^-1 s^-1, with quantum Hall effect (QHE) observed at room temperature. Fractional quantum Hall effect (

SUBMITTER: Gao X 

PROVIDER: S-EPMC9477858 | biostudies-literature | 2022 Sep

REPOSITORIES: biostudies-literature