Edge-Contact MoS₂ Transistors Fabricated Using Thermal Scanning Probe Lithography.

ABSTRACT: The science and engineering of two-dimensional materials (2DMs), in particular, of 2D semiconductors, is advancing at a thriving pace. It is well known that these delicate few-atoms thick materials can be damaged during the processing toward their integration into final devices. Thermal scanning probe lithography (t-SPL) is a gentle alternative to the typically used electron beam lithography to fabricate these devices avoiding the use of electrons, which are well known to deteriorate the 2DMs' properties. Here, t-SPL is used for the fabrication of MoS₂-based field effect transistors (FETs). In particular, the use of t-SPL is demonstrated for the first time for the fabrication of edge-contact MoS₂ FETs, combining the hot-tip patterning and Ar⁺ milling to etc

SUBMITTER: Conde-Rubio A 

PROVIDER: S-EPMC9501915 | biostudies-literature | 2022 Sep

REPOSITORIES: biostudies-literature