Temperature-Dependent Absorption of Ternary HfS_2-xSe_x 2D Layered Semiconductors.

ABSTRACT: In this study, we present the investigation of optical properties on a series of HfS_2-xSe_x crystals with different Se compositions x changing from 0 to 2. We used the chemical-vapor transport method to grow these layered ternary compound semiconductors in bulk form. Their lattice constants and crystal properties were characterized by X-ray diffraction, high-resolution transmission electron microscopy, and Raman spectroscopy. We have performed absorption spectroscopies to determine their optical band-gap energies, which started from 2.012 eV with x = 0, and gradually shifts to 1.219 eV for x = 2. Furthermore, we measured the absorption spectroscopies at different temperatures in the range of 20-300 K to identify the temperature dependence of band-gap energies. The band

SUBMITTER: Lin DY 

PROVIDER: S-EPMC9502516 | biostudies-literature | 2022 Sep

REPOSITORIES: biostudies-literature