Superlow Power Consumption Artificial Synapses Based on WSe2 Quantum Dots Memristor for Neuromorphic Computing

ABSTRACT: As the emerging member of zero-dimension transition metal dichalcogenide, WSe2 quantum dots (QDs) have been applied to memristors and exhibited better resistance switching characteristics and miniaturization size. However, low power consumption and high reliability are still challenges for WSe2 QDs-based memristors as synaptic devices. Here, we demonstrate a high-performance, superlow power consumption memristor device with the structure of Ag/WSe2 QDs/La0.3Sr0.7MnO3/SrTiO3. The device displays excellent resistive switching memory behavior with a ROFF/RON ratio of ~5 × 103, power consumption per switching as low as 0.16 nW, very low set, and reset voltage of ~0.52 V and~ -0.19 V with excellent cycling stability, good reproducibility, and decent data retention capability. The superlow power

SUBMITTER: Wang Z 

PROVIDER: S-EPMC9513833 | biostudies-literature | 2022 Jan

REPOSITORIES: biostudies-literature