Optimisation of geometric aspect ratio of thin film transistors for low-cost flexible CMOS inverters and its practical implementation.

ABSTRACT: A low-cost, flexible processor is essential to realise affordable flexible electronic systems and transform everyday objects into smart-objects. Thin film transistors (TFTs) based on metal-oxides (or organics) are ideal candidates as they can be manufactured at low processing temperatures and low-cost per unit area, unlike traditional silicon devices. The development of complementary metal-oxide-semiconductor (CMOS) technology based on these materials remains challenging due to differences in performance between n- and p-type TFTs. Existing geometric rules typically compensate the lower mobility of the metal-oxide p-type TFT by scaling up the width-to-length (W/L) ratio but fail to take into account the significant off-state leakage current. Here we propose the concept of an optimal geomet

SUBMITTER: van Fraassen NCA 

PROVIDER: S-EPMC9515102 | biostudies-literature | 2022 Sep

REPOSITORIES: biostudies-literature