Combining Freestanding Ferroelectric Perovskite Oxides with Two-Dimensional Semiconductors for High Performance Transistors.

ABSTRACT: We demonstrate the fabrication of field-effect transistors based on single-layer MoS₂ and a thin layer of BaTiO₃ (BTO) dielectric, isolated from its parent epitaxial template substrate. Thin BTO provides an ultrahigh-κ gate dielectric effectively screening Coulomb scattering centers. These devices show mobilities substantially larger than those obtained with standard SiO₂ dielectrics and comparable with values obtained with hexagonal boron nitride, a dielectric employed for fabrication of high-performance two-dimensional (2D) based devices. Moreover, the ferroelectric character of BTO induces a robust hysteresis of the current vs gate voltage characteristics, attributed to its polarization switching. This hysteresis is strongly suppressed when the device is

SUBMITTER: Puebla S 

PROVIDER: S-EPMC9523702 | biostudies-literature | 2022 Sep

REPOSITORIES: biostudies-literature