Grain boundary passivation via balancing feedback of hole barrier modulation in HfO_2-x for nanoscale flexible electronics.

ABSTRACT: Flexible electronics has attracted considerable attention owing to its enormous potential for practical applications in various fields. However, the massive strain produced during bending degrades the device. Especially at grain boundaries, due to the accumulation of defects, this degradation is exacerbated in flexible electronic devices. The importance of electrically inactivated grain boundaries increases as devices scale down to the nanoscale. Here, we propose an HfO_2-x thin film that can be used as an excellent material for flexible electronics with versatile functionality, especially for grain boundary passivation. Various electrical phases of HfO_2-x thin films with conducting to insulating behavior, which originates from oxygen deficiency, have been fabricated o

SUBMITTER: Kim YS 

PROVIDER: S-EPMC9525481 | biostudies-literature | 2022 Sep

REPOSITORIES: biostudies-literature