Structural and Electrical Response of Emerging Memories Exposed to Heavy Ion Radiation.

ABSTRACT: Hafnium oxide- and GeSbTe-based functional layers are promising candidates in material systems for emerging memory technologies. They are also discussed as contenders for radiation-harsh environment applications. Testing the resilience against ion radiation is of high importance to identify materials that are feasible for future applications of emerging memory technologies like oxide-based, ferroelectric, and phase-change random-access memory. Induced changes of the crystalline and microscopic structure have to be considered as they are directly related to the memory states and failure mechanisms of the emerging memory technologies. Therefore, we present heavy ion irradiation-induced effects in emerging memories based on different memory materials, in particular, HfO₂-, HfZrO

SUBMITTER: Vogel T 

PROVIDER: S-EPMC9527794 | biostudies-literature | 2022 Sep

REPOSITORIES: biostudies-literature