InGaN micro-light-emitting diodes monolithically grown on Si: achieving ultra-stable operation through polarization and strain engineering.

ABSTRACT: Micro or submicron scale light-emitting diodes (µLEDs) have been extensively studied recently as the next-generation display technology. It is desired that µLEDs exhibit high stability and efficiency, submicron pixel size, and potential monolithic integration with Si-based complementary metal-oxide-semiconductor (CMOS) electronics. Achieving such µLEDs, however, has remained a daunting challenge. The polar nature of III-nitrides causes severe wavelength/color instability with varying carrier concentrations in the active region. The etching-induced surface damages and poor material quality of high indium composition InGaN quantum wells (QWs) severely deteriorate the performance of µLEDs, particularly those emitting in the green/red wavelength. Here we report, for the first time, µLEDs grown

SUBMITTER: Wu Y 

PROVIDER: S-EPMC9550839 | biostudies-literature | 2022 Oct

REPOSITORIES: biostudies-literature