Switching p-type to high-performance n-type organic electrochemical transistors via doped state engineering.

ABSTRACT: High-performance n-type organic electrochemical transistors (OECTs) are essential for logic circuits and sensors. However, the performances of n-type OECTs lag far behind that of p-type ones. Conventional wisdom posits that the LUMO energy level dictates the n-type performance. Herein, we show that engineering the doped state is more critical for n-type OECT polymers. By balancing more charges to the donor moiety, we could effectively switch a p-type polymer to high-performance n-type material. Based on this concept, the polymer, P(gTDPP2FT), exhibits a record high n-type OECT performance with μC* of 54.8 F cm^-1 V^-1 s^-1, mobility of 0.35 cm² V^-1 s^-1, and response speed of τ_on/τ_off = 1.75/0.15 ms. Calcul

SUBMITTER: Li P 

PROVIDER: S-EPMC9551099 | biostudies-literature | 2022 Oct

REPOSITORIES: biostudies-literature