Improved Resistive Switching with Low-Power Synaptic Behaviors of ZnO/Al₂O₃ Bilayer Structure.

ABSTRACT: In this work, the resistive switching behavior of bilayer ZnO/Al₂O₃-based resistive-switching random access memory (RRAM) devices is demonstrated. The polycrystalline nature of the ZnO layer confirms the grain boundary, which helps easy oxygen ion diffusion. Multilevel resistance states were modulated under DC bias by varying the current compliance from 0.1 mA to 0.8 mA, the SET operations where the low resistance state of the memristor device was reduced from 25 kΩ to 2.4 kΩ. The presence of Al₂O₃ acts as a redox layer and facilitates oxygen vacancy exchange that demonstrates stable gradual conductance change. Stepwise disruption of conductive filaments was monitored depending on the slow DC voltage sweep rate. This is attributed to the atomic s

SUBMITTER: Mahata C 

PROVIDER: S-EPMC9572464 | biostudies-literature | 2022 Sep

REPOSITORIES: biostudies-literature