Relation between Ga Vacancies, Photoluminescence, and Growth Conditions of MOVPE-Prepared GaN Layers.

ABSTRACT: A set of GaN layers prepared by metalorganic vapor phase epitaxy under different technological conditions (growth temperature carrier gas type and Ga precursor) were investigated using variable energy positron annihilation spectroscopy (VEPAS) to find a link between technological conditions, GaN layer properties, and the concentration of gallium vacancies (V_Ga). Different correlations between technological parameters and V_Ga concentration were observed for layers grown from triethyl gallium (TEGa) and trimethyl gallium (TMGa) precursors. In case of TEGa, the formation of V_Ga was significantly influenced by the type of reactor atmosphere (N₂ or H₂), while no similar behaviour was observed for growth from TMGa. V_Ga formation w

SUBMITTER: Hospodkova A 

PROVIDER: S-EPMC9572910 | biostudies-literature | 2022 Oct

REPOSITORIES: biostudies-literature