Polarization-Type Potential-Induced Degradation in Front-Emitter p-Type and n-Type Crystalline Silicon Solar Cells.

ABSTRACT: For SiO₂ layers underneath the SiN _x antireflection/passivation layers of front-emitter p-type c-Si solar cells, this paper presents an investigation into their effects on polarization-type potential-induced degradation (PID), in addition to a comparison of polarization-type PID behavior in front-emitter p-type c-Si cells and front-emitter n-type c-Si cells. After PID tests with a bias of +1000 V, p-type c-Si cells without SiO₂ layers underneath the SiN _x layers showed no degradation, although p-type c-Si cells with approx. 10 nm thick SiO₂ layers showed polarization-type PID, which is characterized by a reduction of the short-circuit current density and the open-circuit voltage. This result implies that highly insulating

SUBMITTER: Yamaguchi S 

PROVIDER: S-EPMC9583327 | biostudies-literature | 2022 Oct

REPOSITORIES: biostudies-literature