Optoelectronic properties and ultrafast carrier dynamics of copper iodide thin films.

ABSTRACT: As a promising high mobility p-type wide bandgap semiconductor, copper iodide has received increasing attention in recent years. However, the defect physics/evolution are still controversial, and particularly the ultrafast carrier and exciton dynamics in copper iodide has rarely been investigated. Here, we study these fundamental properties for copper iodide thin films by a synergistic approach employing a combination of analytical techniques. Steady-state photoluminescence spectra reveal that the emission at ~420 nm arises from the recombination of electrons with neutral copper vacancies. The photogenerated carrier density dependent ultrafast physical processes are elucidated with using the femtosecond transient absorption spectroscopy. Both the effects of hot-phonon bottleneck and the Au

SUBMITTER: Li ZH 

PROVIDER: S-EPMC9606309 | biostudies-literature | 2022 Oct

REPOSITORIES: biostudies-literature