Effect of Post-Annealing on Barrier Modulations in Pd/IGZO/SiO₂/p⁺-Si Memristors.

ABSTRACT: In this article, we study the post-annealing effect on the synaptic characteristics in Pd/IGZO/SiO₂/p⁺-Si memristor devices. The O-H bond in IGZO films affects the switching characteristics that can be controlled by the annealing process. We propose a switching model based on using a native oxide as the Schottky barrier. The barrier height is extracted by the conduction mechanism of thermionic emission in samples with different annealing temperatures. Additionally, the change in conductance is explained by an energy band diagram including trap models. The activation energy is obtained by the depression curve of the samples with different annealing temperatures to better understand the switching mechanism. Moreover, our results reveal that the annealing temperature and

SUBMITTER: Kim D 

PROVIDER: S-EPMC9610976 | biostudies-literature | 2022 Oct

REPOSITORIES: biostudies-literature