Dense dislocations enable high-performance PbSe thermoelectric at low-medium temperatures.

ABSTRACT: PbSe-based thermoelectric materials exhibit promising ZT values at medium temperature, but its near-room-temperature thermoelectric properties are overlooked, thus restricting its average ZT (ZT_ave) value at low-medium temperatures. Here, a high ZT_ave of 0.90 at low temperature (300-573 K) is reported in n-type PbSe-based thermoelectric material (Pb_1.02Se_0.72Te_0.20S_0.08-0.3%Cu), resulting in a large ZT_ave of 0.96 at low-medium temperatures (300-773 K). This high thermoelectric performance stems from its ultralow lattice thermal conductivity caused by dense dislocations through heavy Te/S alloying and Cu interstitial doping. The dislocation density evaluated by modified Williamson-Hall method reaches up to 5.4 × 10

SUBMITTER: Xu L 

PROVIDER: S-EPMC9616947 | biostudies-literature | 2022 Oct

REPOSITORIES: biostudies-literature