Heteroepitaxial Growth of Vertically-Aligned GaN Single-Crystalline Microrod Arrays on Silicon Substrates.

ABSTRACT: The heteroepitaxial growth of vertically aligned gallium nitride (GaN) single-crystalline microrod arrays on silicon substrates was achieved with high reproducibility by using the plasma-enhanced chemical vapor deposition (PECVD) method in the furnace. By reducing the plasma power from 70 to 15 W, the crystal morphology of GaN varied from thin films to microrod arrays with the decreased V/III gas ratio. The growth of GaN crystals occurred in the vertical direction of the substrate and in the lateral direction of the growth axis via the self-catalytic vapor-liquid-solid mechanism (VLS mechanism) and the vapor-solid mechanism (VS mechanism), respectively, contributing to the formation of inverted hexagonal GaN cone microrods. Furthermore, the morphology of inverted hexagonal GaN cone microro

SUBMITTER: Chuang CW 

PROVIDER: S-EPMC9631740 | biostudies-literature | 2022 Nov

REPOSITORIES: biostudies-literature