Interface Influence on the Photoelectric Performance of Transition Metal Dichalcogenide Lateral Heterojunctions.

ABSTRACT: The ultrathin feature of two-dimensional (2D) transition metal dichalcogenides (TMDs) has brought special performance in electronic and optoelectronic fields. When vertical and lateral heterojunctions are made using different TMD combinations, the original properties of premier TMDs can be optimized. Especially for lateral heterojunctions, their sharp interface signifies a narrow space charge region, leading to a strong in-plane built-in electric field, which may contribute to high separation efficiency of photogenerated carriers, good rectification behavior, self-powered photoelectric device construction, etc. However, due to the poor controllability over the synthesis process, obtaining a clean and sharp interface of the lateral heterojunction is still a challenge. Herein, we propose a s

SUBMITTER: Li J 

PROVIDER: S-EPMC9631909 | biostudies-literature | 2022 Nov

REPOSITORIES: biostudies-literature