Development of a method for calculating effective displacement damage doses in semiconductors and applications to space field

ABSTRACT: The displacement damage dose (DDD) is a common index used to predict the life of semiconductor devices employed in space-based environments where they will be exposed to radiation. The DDD is commonly estimated from the non-ionizing energy loss based on the Norgett-Robinson-Torrens (NRT) model, although a new definition for a so-called effective DDD considers the molecular dynamic (MD) simulation with the amorphization in semiconductors. The present work developed a new model for calculating the conventional and effective DDD values for silicon carbide (SiC), indium arsenide (InAs), gallium arsenide (GaAs) and gallium nitride (GaN) semiconductors. This model was obtained by extending the displacement per atom tally implemented in the particle and heavy ion transport code system (PHITS). Th

SUBMITTER: Iwamoto Y 

PROVIDER: S-EPMC9632926 | biostudies-literature | 2022 Jan

REPOSITORIES: biostudies-literature