B-Site Nanoscale-Ordered Structure Enables Ultra-High Tunable Performance.

ABSTRACT: Tunable devices constructed by ferroelectric thin films are often desired to possess a low dielectric loss while maintainging a high dielectric tunability over a broad operating temperature range in applications, for example, resonators, filters, or phase shifters. However, it is difficult to simultaneously achieve these characteristics by traditional strategies, such as doping and strain modifying. Here, we demonstrate that the dielectric tunability of the sol-gel-prepared Pb(Sc_1/2Nb_1/2)_0.9(Mg_1/3Nb_2/3)_0.1O₃ (PSNMN) thin film can be almost doubled from ~47% to ~80.0% (at 10 kHz) at a low electric field (~530 kV/cm), and the dielectric loss can be sharply reduced by more than an order of magnitude, from ~0.50 to ~0

SUBMITTER: Peng B 

PROVIDER: S-EPMC9639443 | biostudies-literature | 2022

REPOSITORIES: biostudies-literature