Defect Passivation on Lead-Free CsSnI₃ Perovskite Nanowires Enables High-Performance Photodetectors with Ultra-High Stability.

ABSTRACT: In recent years, Pb-free CsSnI₃ perovskite materials with excellent photoelectric properties as well as low toxicity are attracting much attention in photoelectric devices. However, deep level defects in CsSnI₃, such as high density of tin vacancies, structural deformation of SnI₆^- octahedra and oxidation of Sn²⁺ states, are the major challenge to achieve high-performance CsSnI₃-based photoelectric devices with good stability. In this work, defect passivation method is adopted to solve the above issues, and the ultra-stable and high-performance CsSnI₃ nanowires (NWs) photodetectors (PDs) are fabricated via incorporating 1-butyl-2,3-dimethylimidazolium chloride salt (BMIMCl) into perovskites. Through materials anal

SUBMITTER: Gao Z 

PROVIDER: S-EPMC9640512 | biostudies-literature | 2022 Nov

REPOSITORIES: biostudies-literature