Binary THz modulator based on silicon Schottky-metasurface.

ABSTRACT: We propose a metasurface THz modulator based on split-ring resonators (SRRs) formed by four interconnected horizontal Si-Au Schottky diodes. The equivalent junction capacitance of each SRR in the proposed modulator is much smaller than that of the previously reported metasurface counterparts with vertical Schottky junctions, leading to a higher modulation speed. To modulate a THz incident signal by the proposed metasurface, we vary the bias voltage externally applied to the Schottky junctions. Applying a reverse bias of V_A =  - 5 V to the Au gate, two LC resonances at 0.48 THz, and 0.95 THz are excited in the metasurface. Switching the applied voltage to V_A =  + 0.49 V, we diminish the oscillator strengths of the LC resonances, creating one dipole resonance at 0.73 TH

SUBMITTER: Ahadi S 

PROVIDER: S-EPMC9640677 | biostudies-literature | 2022 Nov

REPOSITORIES: biostudies-literature