Composition-dependent photoconductivities in indium aluminium nitride nanorods grown by magnetron sputter epitaxy.

ABSTRACT: Photoconduction (PC) properties were investigated for ternary indium aluminium nitride (In _x Al_1-x N) nanorods (NRs) with different indium compositions (x) from 0.35 to 0.68, as grown by direct-current reactive magnetron sputter epitaxy. Cross-sectional scanning transmission electron microscopy (STEM) reveals single-crystal quality of the vertically aligned In _x Al_1-x N NRs. Single-rod photodetector devices with good ohmic contacts were fabricated using the focused-ion-beam technique (FIB), where the In-rich In_0.68Al_0.32N NR exhibits an optimal photocurrent responsivity of 1400 A W^-1 and photoconductive gain of 3300. A transition from a positive photoresponse to a negative photor

SUBMITTER: Bangolla HK 

PROVIDER: S-EPMC9642355 | biostudies-literature | 2022 Nov

REPOSITORIES: biostudies-literature