Selective Fabrication of Bismuthene and α-Bi on Hydrogen-Terminated SiC(0001).

ABSTRACT: Nanomaterials based on monoatomic bismuth (Bi) are attracting particular attention because they are candidates of two-dimensional (2D) topological insulators and Rashba metals useful for spintronic applications. We report convenient selective fabrication of two different types of ultrathin Bi films, bismuthene and α-Bi on hydrogen-terminated SiC(0001), by combining the molecular-beam-epitaxy (MBE) method and the low-temperature and low-pressure hydrogen chemical etching of SiC. We have succeeded in selectively fabricating these two different Bi phases by simply tuning the substrate temperature during the MBE process. We observed that while bismuthene and α-Bi showed a similar low-energy electron diffraction pattern of the (√3 × √3)R30° periodicity, angle-resolved photoemission spectroscopy

SUBMITTER: Yaegashi K 

PROVIDER: S-EPMC9648492 | biostudies-literature | 2022 Nov

REPOSITORIES: biostudies-literature