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Dual-channel P-type ternary DNTT-graphene barristor.

ABSTRACT: P-type ternary switch devices are crucial elements for the practical implementation of complementary ternary circuits. This report demonstrates a p-type ternary device showing three distinct electrical output states with controllable threshold voltage values using a dual-channel dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]-thiophene-graphene barristor structure. To obtain transfer characteristics with distinctively separated ternary states, novel structures called contact-resistive and contact-doping layers were developed. The feasibility of a complementary standard ternary inverter design around 1 V was demonstrated using the experimentally calibrated ternary device model.

SUBMITTER: Lee Y

PROVIDER: S-EPMC9653424 | biostudies-literature | 2022 Nov

REPOSITORIES: biostudies-literature

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Dual-channel P-type ternary DNTT-graphene barristor.

Lee Yongsu Y Kim Seung-Mo SM Kim Kiyung K Kim So-Young SY Lee Ho-In HI Kwon Heejin H Lee Hae-Won HW Kim Chaeeun C Some Surajit S Hwang Hyeon Jun HJ Lee Byoung Hun BH

Scientific reports 20221112 1

P-type ternary switch devices are crucial elements for the practical implementation of complementary ternary circuits. This report demonstrates a p-type ternary device showing three distinct electrical output states with controllable threshold voltage values using a dual-channel dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]-thiophene-graphene barristor structure. To obtain transfer characteristics with distinctively separated ternary states, novel structures called contact-resistive and contact-doping l ...[more]

PMID: 36371420

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