Role of ambient temperature in modulation of behavior of vanadium dioxide volatile memristors and oscillators for neuromorphic applications.

ABSTRACT: Volatile memristors are versatile devices whose operating mechanism is based on an abrupt and volatile change of resistivity. This switching between high and low resistance states is at the base of cutting edge technological implementations such as neural/synaptic devices or random number generators. A detailed understanding of this operating mechanisms is essential prerequisite to exploit the full potentiality of volatile memristors. In this respect, multi-physics device simulations provide a powerful tool to single out material properties and device features that are the keys to achieve desired behaviors. In this paper, we perform 3D electrothermal simulations of volatile memristors based on vanadium dioxide (VO[Formula: see text]) to accurately investigate the interplay among Joule effe

SUBMITTER: Carapezzi S 

PROVIDER: S-EPMC9653463 | biostudies-literature | 2022 Nov

REPOSITORIES: biostudies-literature