Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression.

ABSTRACT: Amorphous oxide semiconductor (AOS) field-effect transistors (FETs) have been integrated with complementary metal-oxide-semiconductor (CMOS) circuitry in the back end of line (BEOL) CMOS process; they are promising devices creating new and various functionalities. Therefore, it is urgent to understand the physics determining their scalability and establish a physics-based model for a robust device design of AOS BEOL FETs. However, the advantage emphasized to date has been mainly an ultralow leakage current of these devices. A device modeling that comprehensively optimizes the threshold voltage (V_T), the short-channel effect (SCE), the subthreshold swing (SS), and the field-effect mobility (µ_FE) of short-channel AOS FETs has been rarely reported. In this study, the dev

SUBMITTER: Kim D 

PROVIDER: S-EPMC9653482 | biostudies-literature | 2022 Nov

REPOSITORIES: biostudies-literature