Novel InGaSb/AlP Quantum Dots for Non-Volatile Memories.

ABSTRACT: Non-volatile memories based on the flash architecture with self-assembled III-V quantum dots (SAQDs) used as a floating gate are one of the prospective directions for universal memories. The central goal of this field is the search for a novel SAQD with hole localization energy (E_loc) sufficient for a long charge storage (10 years). In the present work, the hole states' energy spectrum in novel InGaSb/AlP SAQDs was analyzed theoretically with a focus on its possible application in non-volatile memories. Material intermixing and formation of strained SAQDs from a Ga_xAl_1-xSb_yP_1-y, In_xAl_1-xSb_yP_1-y or an In_xGa_1-

SUBMITTER: Abramkin DS 

PROVIDER: S-EPMC9654477 | biostudies-literature | 2022 Oct

REPOSITORIES: biostudies-literature