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Kinetics of Catalyst-Free and Position-Controlled Low-Pressure Chemical Vapor Deposition Growth of VO₂ Nanowire Arrays on Nanoimprinted Si Substrates.

ABSTRACT: In the present article, the position-controlled and catalytic-free synthesis of vanadium dioxide (VO₂) nanowires (NWs) grown by the chemical vapor deposition (CVD) on nanoimprinted silicon substrates in the form of nanopillar arrays was analyzed. The NW growth on silicon nanopillars with different cross-sectional areas was studied, and it has been shown that the NWs' height decreases with an increase in their cross-sectional area. The X-ray diffraction technique, scanning electron microscopy, and X-ray photoelectron spectroscopy showed the high quality of the grown VO₂ NWs. A qualitative description of the growth rate of vertical NWs based on the material balance equation is given. The dependence of the growth rate of vertical and horizontal NWs on the precursor conce

SUBMITTER: Mutilin SV

PROVIDER: S-EPMC9656171 | biostudies-literature | 2022 Nov

REPOSITORIES: biostudies-literature

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Kinetics of Catalyst-Free and Position-Controlled Low-Pressure Chemical Vapor Deposition Growth of VO₂ Nanowire Arrays on Nanoimprinted Si Substrates.

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Kinetics of Catalyst-Free and Position-Controlled Low-Pressure Chemical Vapor Deposition Growth of VO2 Nanowire Arrays on Nanoimprinted Si Substrates.

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Kinetics of Catalyst-Free and Position-Controlled Low-Pressure Chemical Vapor Deposition Growth of VO₂ Nanowire Arrays on Nanoimprinted Si Substrates.