All Solution-Processed Inorganic, Multilevel Memristors Utilizing Liquid Metals Electrodes Suitable for Analog Computing.

ABSTRACT: Herein, we report a solution-processable memristive device based on bismuth vanadate (BiVO₄) and titanium dioxide (TiO₂) with gallium-based eutectic gallium-indium (EGaIn) and gallium-indium-tin alloy (GaInSn) liquid metal as the top electrode. Scanning electron microscopy (SEM) shows the formation of a nonporous structure of BiVO₄ and TiO₂ for efficient resistive switching. Additionally, the gallium-based liquid metal (GLM)-contacted memristors exhibit stable memristor behavior over a wide temperature range from -10 to +90 °C. Gallium atoms in the liquid metal play an important role in the conductive filament formation as well as the device's operation stability as elucidated by I-V characteristics. The synaptic behavior of the GLM

SUBMITTER: Zaheer M 

PROVIDER: S-EPMC9670282 | biostudies-literature | 2022 Nov

REPOSITORIES: biostudies-literature