A comparative study of interfacial thermal conductance between metal and semiconductor.

ABSTRACT: To understand and control thermal conductance of interface between metal and semiconductor has now become a crucial task for the thermal design and management of nano-electronic and micro-electronic devices. The interfacial alignments and electronic characteristics of the interfaces between metal and semiconductor are studied using a first-principles calculation based on hybrid density functional theory. The thermal conductance of interfaces between metal and semiconductor were calculated and analyzed using diffuse mismatch model, acoustic mismatch model and nonequilibrium molecular dynamics methods. Especially, according to nonequilibrium molecular dynamics, the values of thermal conductance were obtained to be 32.55 MW m^-2 K^-1 and 341.87 MW m^-2 K^-1</

SUBMITTER: Wu K 

PROVIDER: S-EPMC9675788 | biostudies-literature | 2022 Nov

REPOSITORIES: biostudies-literature