Controlling the Formation of Conductive Pathways in Memristive Devices.

ABSTRACT: Resistive random-access memories are promising candidates for novel computer architectures such as in-memory computing, multilevel data storage, and neuromorphics. Their working principle is based on electrically stimulated materials changes that allow access to two (digital), multiple (multilevel), or quasi-continuous (analog) resistive states. However, the stochastic nature of forming and switching the conductive pathway involves complex atomistic defect configurations resulting in considerable variability. This paper reveals that the intricate interplay of 0D and 2D defects can be engineered to achieve reproducible and controlled low-voltage formation of conducting filaments. The author find that the orientation of grain boundaries in polycrystalline HfO_x is directly related

SUBMITTER: Winkler R 

PROVIDER: S-EPMC9685438 | biostudies-literature | 2022 Nov

REPOSITORIES: biostudies-literature