Research on the Influence of the Interfacial Properties Between a Cu₃ BiS₃ Film and an In_x Cd_{1- x} S Buffer Layer for Photoelectrochemical Water Splitting.

ABSTRACT: The ternary compound photovoltaic semiconductor Cu₃ BiS₃ thin film-based photoelectrode demonstrates a quite promising potential for photoelectrochemical hydrogen evolution. The presented high onset potential of 0.9 V_RHE attracts much attention and shows that the Cu₃ BiS₃ thin films are quite good as an efficient solar water splitting photoelectrode. However, the CdS buffer does not fit the Cu₃ BiS₃ thin film: the conduction band offset between CdS and Cu₃ BiS₃ reaches 0.7 eV, and such a high conduction band offset (CBO) significantly increases the interfacial recombination ratio and is the main reason for the relatively low photocurrent of the Cu₃ BiS₃ /CdS photoelectro

SUBMITTER: Wu X 

PROVIDER: S-EPMC9685470 | biostudies-literature | 2022 Nov

REPOSITORIES: biostudies-literature