Near-field infrared nanoscopic study of EUV- and e-beam-exposed hydrogen silsesquioxane photoresist.

ABSTRACT: This article presents a technique of scattering-type scanning near-field optical microscopy (s-SNOM) based on scanning probe microscopy as a nanoscale-resolution chemical visualization technique of the structural changes in photoresist thin films. Chemical investigations were conducted in the nanometer regime by highly concentrated near-field infrared on the sharp apex of the metal-coated atomic force microscopy (AFM) tip. When s-SNOM was applied along with Fourier transform infrared spectroscopy to characterize the extreme UV- and electron-beam (e-beam)-exposed hydrogen silsesquioxane films, line and space patterns of half-pitch 100, 200, 300, and 500 nm could be successfully visualized prior to pattern development in the chemical solutions. The linewidth and line edge roughness values of

SUBMITTER: Kim J 

PROVIDER: S-EPMC9718909 | biostudies-literature | 2022 Dec

REPOSITORIES: biostudies-literature