Wurtzite Gallium Phosphide via Chemical Beam Epitaxy: Impurity-Related Luminescence vs Growth Conditions.

ABSTRACT: The metastable wurtzite crystal phase in gallium phosphide (WZ GaP) is a relatively new structure with little available information about its emission properties compared to the most stable zinc-blend phase. Here, the effect of growth conditions of WZ GaP nano- and microstructures obtained via chemical beam epitaxy on the optical properties was studied using power- and temperature-dependent photoluminescence (PL). We showed that the PL spectra are dominated by two strong broad emission bands at 1.68 and 1.88 eV and two relatively narrow peaks at 2.04 and 2.09 eV. The broad emissions are associated with the presence of carbon and a small number of extended crystal defects, respectively. For the sharp emissions, two main radiative recombination channels were observed with ionization energies

SUBMITTER: da Silva BC 

PROVIDER: S-EPMC9730498 | biostudies-literature | 2022 Dec

REPOSITORIES: biostudies-literature