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Photon extraction enhancement of praseodymium ions in gallium nitride nanopillars.


ABSTRACT: Lanthanoid-doped Gallium Nitride (GaN) integrated into nanophotonic technologies is a promising candidate for room-temperature quantum photon sources for quantum technology applications. We manufactured praseodymium (Pr)-doped GaN nanopillars of varying size, and showed significantly enhanced room-temperature photon extraction efficiency compared to unstructured Pr-doped GaN. Implanted Pr ions in GaN show two main emission peaks at 650.3 nm and 651.8 nm which are attributed to 3P0-3F2 transition in the 4f-shell. The maximum observed enhancement ratio was 23.5 for 200 nm diameter circular pillars, which can be divided into the emitted photon extraction enhancement by a factor of 4.5 and the photon collection enhancement by a factor of 5.2. The enhancement mechanism is explained by the eigenmode resonance inside the nanopillar. Our study provides a pathway for Lanthanoid-doped GaN nano/micro-scale photon emitters and quantum technology applications.

SUBMITTER: Sato SI 

PROVIDER: S-EPMC9731982 | biostudies-literature | 2022 Dec

REPOSITORIES: biostudies-literature

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Photon extraction enhancement of praseodymium ions in gallium nitride nanopillars.

Sato Shin-Ichiro SI   Li Shuo S   Greentree Andrew D AD   Deki Manato M   Nishimura Tomoaki T   Watanabe Hirotaka H   Nitta Shugo S   Honda Yoshio Y   Amano Hiroshi H   Gibson Brant C BC   Ohshima Takeshi T  

Scientific reports 20221208 1


Lanthanoid-doped Gallium Nitride (GaN) integrated into nanophotonic technologies is a promising candidate for room-temperature quantum photon sources for quantum technology applications. We manufactured praseodymium (Pr)-doped GaN nanopillars of varying size, and showed significantly enhanced room-temperature photon extraction efficiency compared to unstructured Pr-doped GaN. Implanted Pr ions in GaN show two main emission peaks at 650.3 nm and 651.8 nm which are attributed to <sup>3</sup>P<sub>  ...[more]

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