Van der Waals epitaxial growth and optoelectronics of a vertical MoS2/WSe2 p–n junction

ABSTRACT: Two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted extensive attention due to their unique electronic and optical properties. In particular, TMDs can be flexibly combined to form diverse vertical van der Waals (vdWs) heterostructures without the limitation of lattice matching, which creates vast opportunities for fundamental investigation of novel optoelectronic applications. Here, we report an atomically thin vertical p–n junction WSe2/MoS2 produced by a chemical vapor deposition method. Transmission electron microscopy and steady-state photoluminescence experiments reveal its high quality and excellent optical properties. Back gate field effect transistor (FET) constructed using this p–n junction exhibits bipolar behaviors and a mobility of 9 cm2/(V·s). In additi

SUBMITTER: Xiao Y 

PROVIDER: S-EPMC9756242 | biostudies-literature | 2022 Oct

REPOSITORIES: biostudies-literature