Flexible Memristor Devices Using Hybrid Polymer/Electrodeposited GeSbTe Nanoscale Thin Films.

ABSTRACT: We report on the development of hybrid organic-inorganic material-based flexible memristor devices made by a fast and simple electrochemical fabrication method. The devices consist of a bilayer of poly(methyl methacrylate) (PMMA) and Te-rich GeSbTe chalcogenide nanoscale thin films sandwiched between Ag top and TiN bottom electrodes on both Si and flexible polyimide substrates. These hybrid memristors require no electroforming process and exhibit reliable and reproducible bipolar resistive switching at low switching voltages under both flat and bending conditions. Multistate switching behavior can also be achieved by controlling the compliance current (CC). We attribute the switching between the high resistance state (HRS) and low resistance state (LRS) in the devices to the formation and

SUBMITTER: Jaafar AH 

PROVIDER: S-EPMC9791617 | biostudies-literature | 2022 Dec

REPOSITORIES: biostudies-literature