Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition

ABSTRACT: In this study, we assessed the physical and chemical properties of HfO2 thin films deposited by plasma-enhanced atomic layer deposition (PEALD). We confirmed the self-limiting nature of the surface reactions involved in the HfO2 thin film’s growth by tracing the changes in the growth rate and refractive index with respect to the different dose times of the Hf precursor and O2 plasma. The PEALD conditions were optimized with consideration of the lowest surface roughness of the films, which was measured by atomic force microscopy (AFM). High-resolution X-ray photoelectron spectroscopy (XPS) was utilized to characterize the chemical compositions, and the local chemical environments of the HfO2 thin films were characterized based on their surface roughness and chemical compositions. The surfac

SUBMITTER: Choi B 

PROVIDER: S-EPMC9823614 | biostudies-literature | 2022 Dec

REPOSITORIES: biostudies-literature