Semiconductor-metal transition in Bi₂Se₃ caused by impurity doping.

ABSTRACT: Doping a typical topological insulator, Bi₂Se₃, with Ag impurity causes a semiconductor-metal (S-M) transition at 35 K. To deepen the understanding of this phenomenon, structural and transport properties of Ag-doped Bi₂Se₃ were studied. Single-crystal X-ray diffraction (SC-XRD) showed no structural transitions but slight shrinkage of the lattice, indicating no structural origin of the transition. To better understand electronic properties of Ag-doped Bi₂Se₃, extended analyses of Hall effect and electric-field effect were carried out. Hall effect measurements revealed that the reduction of resistance was accompanied by increases in not only carrier density but carrier mobility. The field-effect mobility is different for posit

SUBMITTER: Uchiyama T 

PROVIDER: S-EPMC9834400 | biostudies-literature | 2023 Jan

REPOSITORIES: biostudies-literature